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| MITSUBISHI IGBT MODULES CM150DU-24H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point A D F S(4 - Mounting Holes) H B E T CM U J H 3 - M6 Nuts Q Q P N G K K K R M C L Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150DU-24H is a 1200V (VCES), 150 Ampere Dual IGBT Module. Type CM Current Rating Amperes 150 VCES Volts (x 50) 24 G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.25 2.44 Millimeters 108.0 62.0 Dimensions K L M N P Q R S T Inches 0.71 0.87 0.33 0.10 0.85 0.98 0.11 0.25 Dia. 0.6 Millimeters 18.0 22.0 8.5 2.5 21.5 25.0 2.8 6.5 Dia. 15.15 1.14 +0.04/-0.02 29 +1.0/-0.5 3.660.01 1.880.01 0.87 0.16 0.24 0.59 93.00.25 48.00.25 22.0 4.0 6.0 15.0 Sep.1998 MITSUBISHI IGBT MODULES CM150DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM150DU-24H -40 to 150 -40 to 125 1200 20 150 300* 150 300* 890 3.5~4.5 3.5~4.5 400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V, Tj = 25C IC = 150A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage* VCC = 600V, IC = 150A, VGE = 15V IE = 150A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6 2.9 2.85 560 - Max. 1 0.5 7.5 3.7 - - 3.2 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 150A, VGE1 = VGE2 = 15V, RG = 2.1, Resistive Load Switching Operation IE = 150A, diE/dt = -300A/s IE = 150A, diE/dt = -300A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.82 Max. 22 7.4 4.4 200 250 300 350 300 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and M.echanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.020 Max. 0.14 0.24 - Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM150DU-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 300 COLLECTOR CURRENT, IC, (AMPERES) 300 VGE = 20V 11 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 15 12 240 180 240 VCE = 10V Tj = 25C Tj = 125C 4 3 2 1 VGE = 15V Tj = 25C Tj = 125C 180 10 120 60 9 8 120 60 0 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 60 120 180 240 300 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C 102 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) VGE = 0V 8 6 4 2 EMITTER CURRENT, IE, (AMPERES) IC = 300A 102 101 Cies IC = 150A Coes 101 100 Cres IC = 60A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 1.0 1.5 2.0 2.5 3.0 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -300A/sec Tj = 25C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 tf REVERSE RECOVERY TIME, trr, (ns) 103 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 150A td(off) SWITCHING TIME, (ns) 16 12 8 4 102 td(on) tr VCC = 400V VCC = 600V trr 102 101 101 VCC = 600V VGE = 15V RG = 2.1 Tj = 125C Irr 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 200 400 600 800 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM150DU-24H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.14C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.24C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
Price & Availability of CM150DU-24H
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